A715B データシートの表示（PDF） - Quanzhou Jinmei Electronic

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A715B

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA715

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-2.0A ;IB=-0.2A(Pulse test)

VBE

Base-emitter voltage

IC=-1.5A;VCE=-2V(Pulse test)

ICBO

Collector cut-off current

VCB=-35V; IE=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-2V

hFE-2

DC current gain

IC=-1.5A ; VCE=-2V(Pulse test)

fT

Transition frequency

IC=-0.2A ; VCE=-2V(Pulse test)

‹ hFE-1 Classifications

B

C

D

60-120 100-200 160-320

MIN TYP. MAX UNIT

-35

V

-35

V

-5

V

-0.5 -1.0 V

-1.0 -1.5 V

-20 μA

60

320

20

160

MHz

2

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