B772-TO-89 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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B772-TO-89

SOT-89 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89 Plastic-Encapsulate Transistors

B772 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

500 mW (Tamb=25℃)

Collector current

ICM:

Collector-base voltage

-3 A

V(BR)CBO:

-40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLETOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

CLASSIFICATION OF hFE(1)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

Ic=-100µA , IE=0

-40

Collector-emitter breakdown voltage V(BR)CEO

IC= -10 mA , IB=0

-30

Emitter-base breakdown voltage

V(BR)EBO

IE= -100 µA, IC=0

-6

Collector cut-off current

ICBO

VCB= -40 V, IE=0

Collector cut-off current

ICEO

VCE=-30 V, IB=0

Emitter cut-off current

IEBO

VEB=-6V, IC=0

DC current gain

hFE(1)

hFE(2)

VCE= -2V, IC= -1A

60

VCE=-2V, IC= -100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB= -0.2A

Base-emitter saturation voltage

Transition frequency

VBE(sat)

IC=-2A, IB= -0.2A

VCE= -5V, C=-0.1A

fT

50

f = 10MHz

MAX

-1

-10

-1

400

-0.5

-1.5

UNIT

V

V

V

µA

µA

µA

V

V

MHz

CLASSIFICATION OF hFE(1)

Rank

R

Range

60-120

O

100-200

Y

160-320

GR

200-400

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