RSH100N03TB データシートの表示（PDF） - ROHM Semiconductor

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RSH100N03TB

Silicon N-channel MOSFET

ROHM Semiconductor 

RSH100N03

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Gate-source leakage

IGSS

−

−

10 μA VGS=20V, VDS=0V

Drain-source breakdown voltage V(BR) DSS 30

−

−

V ID=1mA, VGS=0V

Zero gate voltage drain current IDSS

−

−

1

μA VDS=30V, VGS=0V

Gate threshold voltage

VGS (th) 1.0

−

2.5

V VDS=10V, ID=1mA

−

Static drain-source on-starte

resistance

RDS

∗

(on)

−

−

Forward transfer admittance Yfs ∗ 6.0

9.5 13.3

12.5 17.5

13.5 18.9

−

−

ID=10A, VGS=10V

mΩ ID=10A, VGS=4.5V

ID=10A, VGS=4V

S ID=10A, VDS=10V

Input capacitance

Ciss

− 1070 −

pF VDS=10V

Output capacitance

Coss

− 320 −

pF VGS=0V

Reverse transfer capacitance Crss

−

Turn-on delay time

td (on) ∗ −

Rise time

tr ∗ −

Turn-off delay time

td (off) ∗

−

Fall time

tf ∗ −

Total gate charge

Qg ∗ −

Gate-source charge

Qgs ∗ −

Gate-drain charge

Qgd ∗ −

∗Pulsed

200 −

10 −

16 −

55 −

24 −

14 20

2.7 −

5.3 −

pF f=1MHz

ns ID=5A, VDD 15V

ns VGS=10V

ns RL=3.0Ω

ns RG =10Ω

nC VDD 15V

nC VGS=5V

nC ID=10A

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter

Forward voltage

∗Pulsed

Symbol Min. Typ. Max. Unit

VSD ∗

−

− 1.2 V

Conditions

IS=6.4A, VGS=0V

Data Sheet

www.rohm.com

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○c 2009 ROHM Co., Ltd. All rights reserved.

2009.12 - Rev.A

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