Q67100-Q1101 データシートの表示（PDF） - Infineon Technologies
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Q67100-Q1101 Datasheet PDF : 28 Pages
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HYB 5116(7)405BJ-50/-60
HYB 3116(7)405BJ/BT(L)-50/-60
4M × 4 EDO-DRAM
AC Characteristics (cont’d) 5, 6
TA = 0 to 70 °C, VCC = 5 V ± 10 % / VCC = 3.3 V ± 0.3 V, tT = 2 ns
Parameter
Symbol
Limit Values
Unit Note
-50
-60
min. max. min. max.
Access time from column address
tAA
OE access time
tOEA
Column address to RAS lead time
tRAL
Read command setup time
tRCS
Read command hold time
tRCH
Read command hold time referenced to RAS tRRH
CAS to output in low-Z
tCLZ
Output buffer turn-off delay
tOFF
Output turn-off delay from OE
tOEZ
Data to CAS low delay
tDZC
Data to OE low delay
tDZO
CAS high to data delay
tCDD
OE high to data delay
tODD
–
25 –
30
ns 8, 10
–
13 –
15 ns
25 –
30 –
ns
0
–
0
–
ns
0
–
0
–
ns 11
0
–
0
–
ns 11
0
–
0
–
ns 8
0
13 0
15 ns 12
0
13 0
15 ns 12
0
–
0
–
ns 13
0
–
0
–
ns 13
10 –
13 –
ns 14
10 –
13 –
ns 14
Write Cycle
Write command hold time
Write command pulse width
Write command setup time
Write command to RAS lead time
Write command to CAS lead time
Data setup time
Data hold time
tWCH
8
–
10 –
ns
tWP
8
–
10 –
ns
tWCS
0
–
0
–
ns 15
tRWL
8
–
10 –
ns
tCWL
8
–
10 –
ns
tDS
0
–
0
–
ns 16
tDH
8
–
10 –
ns 16
Read-Modify-Write Cycle
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
OE command hold time
tRWC
tRWD
tCWD
tAWD
tOEH
113 –
64 –
27 –
39 –
10 –
138 –
77 –
32 –
47 –
13 –
ns
ns 15
ns 15
ns 15
ns
Semiconductor Group
9
1998-10-01
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