C390 データシートの表示（PDF） - New Jersey Semiconductor
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C390 Datasheet PDF : 2 Pages
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C390
CHARACTERISTICS
TEST
Peak Reverse and
Forward Blocking
Current
Peak Reverseand Off-
State Blocking Current
Effective Thermal
Resistance (DC)
SYMBOL
1 ORM
and
' RRM
WIN.
TYP.
10
MAX.
20
UNITS
TEST CONDITIONS
rnA T,= + 25°C, V = VDRM=VRKM
I DRM
—
and
I RRM
R«J.C _
—
20
45
mA Tj=+125°C, V = VDRM = VRRM
_
.059 °C/watt Junction to case — Double Side
Cooling (D.C.)
_
.118
Junction to case — Single Side
Cooling (D.C.)
Critical Exponential
Rate of Rise of For-
ward Blocking Voltage
(Higher values may
cause device switching)
dv/dt 200
**
V//xsec Tj=+l25QC, V,)KM = Rated,
Gate open.
Holding Current
IH
—
100 500 mAdc Tc ~+ 25°C, Anode supply= 24 Vdc.
Initial forward current = 2.0 amps.
Latching Current
IL
—
.25
—
Adc Tc = + 25°C, Anode voltage =24 Vdc,
Load resistance 12 ohms max.
Delay Time
t<
—
.7
—
ft sec TC = + 25°C, IT-=50Adc
Gate supply: 20V, 20ft, 500mA, 0. 1
/xsec max, rise time.
Gate Trigger Current
See Fig. 1 1 For
Recommended Gate
Drive Conditions.
IGT
—
—
150 mAdc TC=+25°C, VD=6Vdc, RL =
3 ohms
—
— 300
__
15
125
TC=-40°C, VD=6Vdc, R L =
3 ohms
Tc=+ I20°C, VD = 6 Vdc, R,.=
3 ohms
Gate Trigger Voltage
VCT
—
—
5
,35
__
—
Vdc TC = -40°C to + 125°C, VD = 6 Vdc,
RL=3 ohms
TC = +I25°C, VD = Rated, R L =
1000 ohms
Peak On-Vollage
VFM
—
—
2.4
Volts TC = + 25°C, IT=3000 A peak.
Duty cycles 0.01%
Circuited Cpmmutated
t,*
Turn-OrTTime
125
/usec (1) T<r=-H25°C, (2)l r - 500A,
(3) V =50 volts min.,
(4) VDRM (reapplied),
(5) Rale of rise of reapplied forward
blocking voltage =20 V/ jisec (linear).
[6) Commutalion di/dl = 25 Amps/Msec.
[7) Repelilion raie = 1 pps.
^8) Gate bias during turn-off interval »
0 volts. 100 ohms.
NOTE: Tc Case Temperature (measured on heatsink 1/8 inch from base of SCR.)
Quality Semi-Conductors
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