BDV64C データシートの表示（PDF） - Inchange Semiconductor

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BDV64C

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

BDV64/A/B/C

DESCRIPTION

·Collector Current -IC= -12A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -2.0V(Max.)@ IC= -5A

·Complement to Type BDV65/A/B/C

APPLICATIONS

·Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDV64

-60

VCBO

Collector-Base

Voltage

BDV64A

-80

V

BDV64B

-100

BDV64C

-120

BDV64

-60

VCEO

Collector-Emitter

Voltage

BDV64A

-80

V

BDV64B

-100

BDV64C

-120

VEBO Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-12

A

ICM

Collector Current-Peak

-15

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

Collector Power Dissipation

@ Ta=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-0.5

A

125

W

3.5

150

℃

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX UNIT

1.0 ℃/W

35.7 ℃/W

isc Website：www.iscsemi.cn

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