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BC321 データシートの表示(PDF) - New Jersey Semiconductor
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BC321
PNP SILICON PLANAR EPITAXIAL TRANSISTORS
New Jersey Semiconductor
BC321 Datasheet PDF : 3 Pages
1
2
3
No/5e Figure
PARAMETER
BC179 "I
BC259 > only
BCJ09
BC322
1
SYMBOL
NF
MIH TYP MAX
UNIT
1.2 4
dB
1.2 4
dB
TEST CONDITIONS
-1C =0. 2mA -7CE-57
RG=2K& f-lKHz
Af-200Hz
-IC=0.2mA -703=5^
RG=2KA f=30Hz-15KHz
D.C. CURRENT GAIN (
H
FE) @ -V£8""57 TA=25°C
at-Ic
HFE G-ROUP vi
HFE GROUP A
(Pulsed) KIN TYP MAX
0.01mA
70
2mA
70 110 140
MIN TYP MAX
110
110 170 220
100mA
60
80
HFE GROUP B
MIN TYP MAX
'
200
200 300 450
140
HFE GROUP C
MIN TYP MAX
330
420 520 800
240
h - PARAMETERS © -IC=2mA -VCE=57 f-lkHz TA=25°C
^ h - PARAMETER
SYMBOL
HFE GROUP 71
HFE GROUP A
MIN TYP MAX
MIN TYP MAX
HFE GROUP B
MIN TYP MAX
HFE GROUP c
MIN TYP MAX
UNIT
Injwt Impedance
hie
Voltage Feedback Ratio
n
re
Small Signal Current Gain
hfe
Output Admittance
h
oe
1.4
2.5
75 HO 150
20
2.7
3
125 190 260
25
4-5 •
3.5
240 330 500
35
8.7
4
450 580 900
60
Kfl
xlO-
4
r
v
TYPICAL CHARACTERISTICS AT TA=25°C (Pulse Test)
D.C. CURRENT GAIN
VS COLLECTOR CURRENT
V
BE AND
v
CE(sat)
VS COLLECTOR CURRENT
200
0.01
100
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