MGF0909 データシートの表示（PDF） - MITSUBISHI ELECTRIC

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MGF0909

L, S BAND POWER GaAs FET

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTOR GaAs FET

MGF0909A

L, S BAND POWER GaAs FET

DESCRIPTION

The MGF0909A, GaAs FET with an N-channel schottky gate, is

designed for use in UHF band amplifiers.

FEATURES

• High output power

P1dB=38dBm(TYP.)

• High power gain

GLP=11dB(TYP.)

• High power added efficiency

ηadd=45%(TYP.)

@f=2.3GHz

@f=2.3GHz,Pin=20dBm

@f=2.3GHz,P1dB=20dBm

APPLICATION

For UHF Band power amplifiers

QUALITY GRADE

• GG

RECOMMENDED BIAS CONDITIONS

• VDS=10V

• ID=1.3A

• Rg=100Ω

• Refer to Bias Procedure

OUTLINE DRAWING

1

Unit:millimeters

2

ø2.2

2

0.6±0.2

3

5.0

GF-7

9.0±0.2

14.0

1 GATE

2 SOURCE

3 DRAIN

ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)

Symbol

Parameter

Ratings

Unit

VGSO

VGDO

ID

Gate to source voltage

Gate to drain voltage

Drain current

-15

V

-15

V

5.0

A

IGR

Reverse gate current

15

mA

IGF

Forward gate current

31.5

mA

PT

Total power dissipation *1

27.3

W

Tch

Channel temperature

175

˚C

Tstg

Storage temperature

*1:TC=25˚C

-65 to +175

˚C

ELECTRICAL CHARACTERISTICS (Ta=25˚C)

Symbol

Parameter

Test conditions

IDSS

VGs(off)

Saturated drain current

Gate to source cut-off voltage

VDS=3V,VGS=0V

VDS=3V,ID=10mA

gm

Transconductance

VDS=3V,ID=1.3A

P1dB

Output power

GLP

Linear power gain

*2 VDS=10V,ID=1.3A,f=2.3GHz

ηadd

Power added efficiency at P1dB

Rth(ch-c) Thermal resistance

*1:Channel to case *2:Pin=22dBm

*1 ∆Vf method

Limits

Unit

Min Typ Max

–

–

5

A

-2

–

-5

V

–

1.5

–

S

37

38

–

dBm

10

11

–

dB

–

45

–

%

–

–

5.5 ˚C/W

Nov. ´97

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