BGX885N データシートの表示（PDF） - Philips Electronics
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BGX885N Datasheet PDF : 8 Pages
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Philips Semiconductors
860 MHz, 17 dB gain push-pull amplifier
Product specification
BGX885N
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω
SYMBOL
Gp
PARAMETER
power gain
SL
slope cable equivalent
FL
flatness of frequency response
s11
input return losses
s22
output return losses
d2
second order distortion
Vo
output voltage
NF
noise figure
Itot
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 750 MHz
f = 40 to 860 MHz
f = 40 to 860 MHz
f = 40 MHz; note 1
f = 800 to 860 MHz
f = 40 MHz; note 1
f = 640 to 860 MHz
note 2
dim = −60 dB; note 3
dim = −60 dB; note 4
f = 50 MHz
f = 350 MHz
f = 550 MHz
f = 650 MHz
f = 750 MHz
f = 860 MHz
note 5
MIN.
16.5
17.3
0.2
−
20
10
20
15
−
61
60
−
−
−
−
−
−
−
MAX.
17.5
−
1.4
±0.3
−
−
−
−
−53
−
−
7.5
7.5
7.5
7.5
8
8
240
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dB
dB
dB
dB
dB
dB
mA
Notes
1. Decrease per octave of 1.5 dB.
2. fp = 349.25 MHz; Vp = Vo = 59 dBmV;
fq = 403.25 MHz; Vq = Vo;
measured at fp + fq = 752.5 MHz.
3. Measured according to DIN45004B:
fp = 341.25 MHz; Vp = Vo;
fq = 348.25 MHz; Vq = Vo −6 dB;
fr = 350.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 339.25 MHz.
4. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 849.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 14
3
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