BGX885N データシートの表示（PDF） - NXP Semiconductors.
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BGX885N Datasheet PDF : 8 Pages
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NXP Semiconductors
860 MHz, 17 dB gain push-pull amplifier
Product specification
BGX885N
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB = 24 V; Tmb = 30 C; ZS = ZL = 75
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Gp
power gain
f = 50 MHz
f = 750 MHz
16.5 17.5 dB
17.3
dB
SL
slope cable equivalent
f = 40 to 860 MHz
0.2
1.4
dB
FL
flatness of frequency response
f = 40 to 860 MHz
0.3 dB
s11
input return losses
f = 40 MHz; note 1
f = 800 to 860 MHz
20
dB
10
dB
s22
output return losses
f = 40 MHz; note 1
f = 640 to 860 MHz
20
dB
15
dB
d2
second order distortion
Vo
output voltage
note 2
dim = 60 dB; note 3
53
dB
61
dBmV
NF
noise figure
dim = 60 dB; note 4
f = 50 MHz
60
dBmV
7.5
dB
f = 350 MHz
7.5
dB
f = 550 MHz
7.5
dB
f = 650 MHz
7.5
dB
f = 750 MHz
8
dB
f = 860 MHz
8
dB
Itot
total current consumption (DC)
note 5
240
mA
Notes
1. Decrease per octave of 1.5 dB.
2. fp = 349.25 MHz; Vp = Vo = 59 dBmV;
fq = 403.25 MHz; Vq = Vo;
measured at fp + fq = 752.5 MHz.
3. Measured according to DIN45004B:
fp = 341.25 MHz; Vp = Vo;
fq = 348.25 MHz; Vq = Vo 6 dB;
fr = 350.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 339.25 MHz.
4. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo;
fq = 858.25 MHz; Vq = Vo 6 dB;
fr = 860.25 MHz; Vr = Vo 6 dB;
measured at fp + fq fr = 849.25 MHz.
5. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 14
3
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