US2G データシートの表示（PDF） - Diode Semiconductor Korea
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US2G Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
US2A---US2M
FIG.1 -- FORWARD CURRENT DERATING CURVE
2 .4
2 .0
1 .4
R E S IS T IV E O R IN D U C T IV E
LOAD
1 .0
0 .8
0 .4
0
0
0 .2 X 0 .2"(5.0 X 5 .0m m )
COPPER PAD
AREAS
25
50
75
100 125 150
LEAD TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
0
US2A-US2G
US2J-US2M
1
0.1
PULSE WIDTH=300
s1%DUTY CYCLE
0.01
TJ=25
0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE(V)
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
50
45
40
35
30
25
20
15
10
5
0
1
TL=110
8 .3 m s S IN G L E H A L F S IN E -W A V E
(JE D E C M E T H O D )
10
100
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
TJ=125
10
125
100℃
1
25℃
0.1
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE. ( )
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
60
40
US2A-US2J
20
10
6
4
TJ=25
2
US2K,US2M
1
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE(V)
100
10
1
0.1
0.01
0.1
1
10
100
T,PULSE DURATION,
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