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US2J データシートの表示(PDF) - MAKO SEMICONDUCTOR CO.,LIMITED

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US2J
MAKOSEMI
MAKO SEMICONDUCTOR CO.,LIMITED MAKOSEMI
US2J Datasheet PDF : 2 Pages
1 2
SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS
Fig.1 TYPICAL FORWARD CHARACTERISTIC
10
Fig.2
US2A - US2M
50V-1000V 2.0A
FORWARD CURRENT DERATING CURVE
2.4
2 US2A thru
US2D
1
2.0
1.6
0.2
US2G
1.2
US2J thru US2M
0.1
0.8
0.01
Tj = 25 °C
0.8 1.0 1.2 1.4 1.6 1.8
F
VF Instantaneous Forward Voltage (V)
0.4
0
0 25 50 75 100 125 150 175
°C
Tamb, ambient temperature (°C)
FigI.3 -TYPICAL REVERSE
CHARACTERISTICS
100
FIG.4-TYPICAL JUNCTION CAPACITANCE
100
US2A-US2G
10
TJ=100 C
10
US2J-US2M
1.0
TJ=25
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
1
0.1
F1G.5-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
50Ω
10Ω
NONINDUCTIVE NONINDUCTIVE
Trr
+0.5A
(-)
(+)
25 Vdc
(approx.)
(-)
D.U.T.
1Ω
NON
INDUCTIVE
PULSE
GENERATIOR
(NOTE 2)
(+)
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
-1.0A
1cm
NOTES : 1.Rise Time=7ns max. Input Impedance=
1 magohm. 22pF
2.Rise time=10ns max. Source Impedance=
MAKO Semicond50ucohtmosr Co., Limited
SET TIME BASE FOR
50/100ns/cm
TJ =25 C
f=1MHz
Vsig=50mVp-p
1.0
10
100
REVERSE VOLTAGE,(V)
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