EGP20C データシートの表示（PDF） - Diode Semiconductor Korea
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EGP20C Datasheet PDF : 2 Pages
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Diode Semiconductor Korea EGP20A(Z) --- EGP20K(Z)
HIGH EFFICIENCY RECTIFIERS
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 --- 800 V
CURRENT: 2.0 A
DO - 15
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.
EGP EGP EGP EGP EGP EGP EGP EGP
20A 20B 20C 20D 20F 20G 20J 20K UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@TA=75
Peak forw ard surge current
VRRM 50
VRMS 35
VDC 50
IF(AV)
8.3ms single half-sine-w ave
superimposed on rated load @TJ=125
Maximum instantaneous forw ard voltage
@ 2.0 A
IFSM
VF
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
IR
Maximum reverse recovery (Note1)
trr
Typical junction capacitance (Note2)
CJ
Typical thermal resistance
Typical thermal resistance
(Note3)
(Note 4)
RθJA
RθJL
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance f rom junction to ambient.
4.Thermal resistance from junction to lead.
100 150 200 300 400 600 800
V
70 105 140 210 280 420 560
V
100 150 200 300 400 600 800
V
2.0
A
75
A
0.95
1.25
5.0
100
50
70
40
15
- 55 ---- + 150
- 55 ---- + 150
1.7
V
Ａ
75
ns
45
pF
／Ｗ
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