RGP20AZ データシートの表示（PDF） - Diode Semiconductor Korea

部品番号

コンポーネント説明

メーカー

RGP20AZ

FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

RGP20A(Z)-- -RGP20J(Z)

FIG.1 --REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50

10

N.1.

N.1.

trr

+0.5A

(+)

50VDC

(APPROX)

(-)

D.U.T.

1

N.1.

OSCILLOSCOPE

(NOTE 1)

(-)

PULSE

GENERATOR

(NOTE2)

(+)

0

-0.25A

-1.0A

1cm

NOTES:1.RESETIME=7ns MAX.INPUTIMPEDANCE=1MΩ.22pF.

2.RESETIME=10ns MAX.SOURCEIMPEDANCE=500Ω.

FIG.2 --PEAK FORWARD SURGE VURRENT

SETTIMEBASEFOR50/100 ns /cm

FIG.3--TYPICAL JUNCTION CAPACITANCE

180

100

80

60

40

20

0

1

TJ=125

8.3ms Single Half

Sine-Wave

10

100

NUMBER OF CYCLES AT 60Hz

FIG.4--TYPICAL FORWARD CHARACTERISTICS

100

10

TJ=25

Pulse Width=300µS

1.0

0.1

0.04

0.01

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

FORWARD VOLTAGE,VOLTS

100

60

40

20

10

4

TJ=25

f=1MHz

2

1

.1 .2 .4

1.0

24

10 2 0 40

100

REVERSE VOLTAGE,VOLTS

FIG.5--FORWARD CURRENT DERATING CURVE

2.0

1.50

1.00

Single Phase

Half Wave 60Hz

0 . 5 0 Resistiveor

Inductive Load

0

0

25 50

75 100 125 150 175

AMBIENT TEMPERATURE,

www.diode.kr

Share Link: