TP2640ND データシートの表示（PDF） - Supertex Inc

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TP2640ND

P-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc 

Typical Performance Curves (cont.)

BVDSS Variation with Temperature

1.1

1.0

0.9

-50

0

50

100

150

Tj (°C)

Transfer Characteristics

-2.0

VDS = -25V

-1.6

+125°C

TA = -55°C

-1.2

25°C

-0.8

-0.4

0

0

-2

-4

-6

-8

-10

VGS (volts)

Capacitance vs. Drain-to-Source Voltage

400

f = 1MHz

300

CISS

200

100

0

0

-10

-20

VDS (volts)

COSS

CRSS

-30

-40

TP2635/TP2640

On-Resistance vs. Drain Current

30

24

VGS = -2.5V

VGS = -4.5V

18

12

VGS = -10V

6

0

0

-0.4

-0.8

-1.2

-1.6

-2.0

ID (amperes)

VTH and RDS Variation with Temperature

2.5

1.2

V(th) @ -1mA

2.0

1.0

1.5

0.8

1.0

0.6

RDS(ON)@ -10V, -0.3A

0.5

0.4

0

-50

0

50

100

150

Tj (°C)

Gate Drive Dynamic Characteristics

-10

-8

678pF

-6

VDS = -10V

-4

VDS = -40V

-2

263pF

0

0

1

2

3

4

5

QG (nanocoulombs)

4

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