M2S56D40ATP-75L データシートの表示（PDF） - MITSUBISHI ELECTRIC
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M2S56D40ATP-75L Datasheet PDF : 37 Pages
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DDR SDRAM (Rev.1.0)
Jul. '01 Preliminary
MITSUBISHI LSIs
M2S56D20/ 30/ 40AKT
256M Double Data Rate Synchronous DRAM
AC TIMING REQUIREMENTS(Continues)
(Ta=0 ~ 70oC, Vdd = VddQ = 2.5V +0.2V, Vss = VssQ = 0V, unless otherwise noted)
Symbol
AC Characteristics Parameter
tRAS Row Active time
tRC Row Cycle time(operation)
tRFC Auto Ref. to Active/Auto Ref. command period
tRCD Row to Column Delay
tRP Row Precharge time
tRRD Act to Act Delay time
tWR Write Recovery time
tDAL Auto Precharge write recovery + precharge time
tWTR Internal Write to Read Command Delay
tXSNR Exit Self Ref. to non-Read command
tXSRD Exit Self Ref. to -Read command
tXPNR Exit Power down to command
tXPRD Exit Power down to -Read command
tREFI Average Periodic Refresh interval
-75A
-75
-10
Unit
Min.
Max
Min.
Max
Min.
Max
45
120,000
45
120,000
50
120,000
ns
65
65
70
ns
75
75
80
ns
20
20
20
ns
20
20
20
ns
15
15
15
ns
15
15
15
ns
35
35
35
ns
1
1
1
tCK
75
75
80
ns
200
200
200
tCK
1
1
1
tCK
1
1
1
tCK
7.8
7.8
7.8
µs
Notes
18
17
Output Load Condition
VOUT
VTT =VREF
50 Ω
Zo=50 Ω
30pF
VREF
DQS
DQ
Output Timing
Measurement
Reference Point
VREF
VREF
MITSUBISHI ELECTRIC
19
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