KBU3510 データシートの表示（PDF） - HY ELECTRONIC CORP.

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KBU3510

SILICON BRIDGE RECTIFIERS

HY ELECTRONIC CORP. 

SILICON BRIDGE RECTIFIERS

FEATURES

●Surge overload rating -240 amperes peak

●Ideal for printed circuit board

●Reliable low cost construction utilizing

molded plastic technique

●Plastic material has U/L

flammability classification 94V-0

●Mounting postition:Any

KBU10005 thru KBU1010

REVERSE VOLTAGE - 50 to 1000Volts

FORWARD CURRENT - 10.0 Amperes

.700(17.8)

.600(16.8)

KBU

.157(4.0)*45°

.935(23.7)

.895(22.7)

.15 X23L

(3.8 X5.7L)

HOLE THRU

300

(7.5)

.780(19.8)

.740(18.8)

(12.50.04)MIN.

.052(1.3)DIA.

.048(1.2)TYP.

.087(2.2)

.071(1.8)

.220(5.6)

.180(4.6)

.276(7.0)

.256(6.5)

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

SYMBOL

VRRM

KBU

10005

50

KBU

1001

100

KBU

1002

200

KBU

1004

400

KBU

1006

600

KBU

1008

800

KBU

1010

1000

Maximum RMS Voltage

VRMS

35

70

140

280

420

560

700

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note 1)

Rectified Current @ TC=100℃ (without heatsink)

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

Maximum Forward Voltage at 5.0A DC

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Operating Temperature Range

@ TJ=25℃

@ TJ=125℃

Storage Temperature Range

VDC

50

100

200

400

600

800

1000

I(AV)

10.0

3.0

IFSM

240

VF

IR

TJ

TSTG

1.0

10

500

-55 to+125

-55 to+150

NOTES: 1.Device mounted on 100mm*100mm*1.6mm Cu plate heatsink.

UNIT

V

V

V

A

A

V

μA

℃

℃

~ 358 ~

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