NTE461 データシートの表示（PDF） - NTE Electronics

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NTE461

Silicon N−Channel JFET Transistor Dual, Matched Pair DC Amp/Sampler/Chopper

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ

Matching Characteristics

Differential Gate Current

IG1−IG2 VDG = 15V, ID = 200µA, TA = +25°C

−

−

Saturation Drain Current Ratio IDSS1/IDSS2 VDS = 15V, VGS = 0, Note 1

0.95 −

Differential Gate−Source Voltage VGS1−VGS2 VGD = 15V ID = 50µA

−

−

ID = 200µA

−

−

Gate−Source Voltage

Differential Drift

VDG = 15V, TA = +25°C/TB = +125°C −

−

ID = 200µA,

Note 2

TA = −55°C/TB = +25°C

−

−

Transconductance Ratio

gfs1/gfs2

0.95 −

Differential Output Conductance gos1−gos2

−

−

Max Unit

5

nA

1.0

15 mV

15 mV

40 µV/°C

40 µV/°C

1.0

3 µmhos

Note 1. Assumes smaller value in numerator.

Note 2. Measured at end points, TA and TB.

.230 (5.84) Dia Max

.195 (4.95) Dia Max

.190

(4.82)

.018 (0.45) Dia

.500

(12.7)

Min

.050 (1.27)

.100 (2.54) Dia

23

1

45°

5

6

7

.038 (0.96)

.041 (1.04)

Pin4 and Pin8 are Omitted

All Leads are Isolated from Case

Pin 1 S1

Pin 2 D1

Pin 3 G1

Pin 5 S2

Pin 6 D2

Pin 7 G2

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