C4260 データシートの表示（PDF） - Hitachi -> Renesas Electronics

部品番号

コンポーネント説明

メーカー

C4260

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC4260

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

25

V

13

V

3

V

50

mA

100

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Collector to base breakdown

voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation

voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Conversion gain

Symbol Min

V(BR)CBO

25

I CBO

—

I CEO

—

I EBO

—

VCE(sat)

—

hFE

50

Cob

—

fT

3.0

CG

—

Noise figure

NF

—

Note: Marking is “TI–”.

Typ Max Unit

—

—

V

—

0.1 µA

—

10

µA

—

0.3 µA

—

0.3 V

—

180

0.85 1.3

3.8 —

19

—

pF

GHz

dB

8

—

dB

Test conditions

IC = 10 µA, IE = 0

VCB = 15 V, IE = 0

VCE = 13 V, RBE = ∞

VEB = 3 V, IC = 0

IC = 20 mA, IB = 4 mA

VCE = 5 V, IC = 5 mA

VCB = 10 V, IE = 0, f = 1MHz

VCE = 5 V, IC = 5 mA

VCC = 5 V, IC = 0.8 mA,

f = 900 MHz

fOSC = 930 MHz (–5dBm),

fout = 30 MHz

See characteristic curves of 2SC4197.

2

Share Link: