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MC33363BDW データシートの表示(PDF) - ON Semiconductor

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MC33363BDW
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC33363BDW Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
MC33363B
ELECTRICAL CHARACTERISTICS (VCC = 20 V, RT = 10 k, CT = 390 pF, CPin 8 = 1.0 mF, for typical values TJ = 25°C,
for min/max values TJ is the operating junction temperature range that applies (Note 4), unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OVERVOLTAGE DETECTION (Pin 11)
Input Threshold Voltage
Input Bias Current (Vin = 2.6 V, TJ = −25 − 125°C)
PWM COMPARATOR (Pins 7, 9)
Duty Cycle
Maximum (VFB = 0 V)
Minimum (VFB = 2.7 V)
POWER SWITCH (Pin 16)
Drain−Source On−State Resistance (ID = 200 mA)
TJ = 25°C
TJ = Tlow to Thigh
Drain−Source Off−State Leakage Current (VDS = 650 V)
TJ = 25°C
TJ = Tlow to Thigh
Rise Time
Fall Time
OVERCURRENT COMPARATOR (Pin 16)
Current Limit Threshold (RT = 10 k)
STARTUP CONTROL (Pin 1)
Peak Startup Current (Vin = 50 V) (TJ = −25 − 100°C)
VCC = 0 V
VCC = (Vth(on) − 0.2 V)
Off−State Leakage Current (Vin = 50 V, VCC = 20 V)
UNDERVOLTAGE LOCKOUT (Pin 3)
Startup Threshold (VCC Increasing)
Minimum Operating Voltage After Turn−On
TOTAL DEVICE (Pin 3)
Power Supply Current
Startup (VCC = 10 V, Pin 1 Open)
Operating
Vth
IIB
DC(max)
DC(min)
RDS(on)
ID(off)
tr
tf
Ilim
Istart
ID(off)
Vth(on)
VCC(min)
ICC
2.47
48
0.5
2.0
2.0
11
7.5
2.6
2.73
V
100
500
nA
%
50
52
0
0
W
15
17
39
mA
0.25
1.0
50
50
ns
50
ns
0.72
0.9
A
mA
5.0
8.0
5.0
8.0
40
200
mA
15.2
18
V
9.5
11.5
V
mA
0.25
0.5
3.2
5.0
THERMAL SHUTDOWN
Shutdown (Junction Temperature Increasing)
Hysteresis (Junction Temperature Decreasing)
Tsd
TH
4. Tested junction temperature range for the MC33363B: Tlow = −25°C Thigh = +125°C
135
°C
30
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