HER602 データシートの表示（PDF） - Diode Semiconductor Korea

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HER602

HIGH EFFICIENCY RECTIFIERS

Diode Semiconductor Korea 

Diode Semiconductor Korea

HER601 --- HER608

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

10

N 1.

N 1.

(+)

50VDC

(approx)

(-)

D.U.T.

1

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE 1)

PULSE

GENERATOR

(NOTE2)

trr

+0.5A

0

-0.25A

-1.0A

1cm

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.

JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .

SET TIME BASE FOR 10/20 ns/cm

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

100

TJ=25

Pulse Width=300 µS

10

50\100\200V

1

300\400V

600\800\1000V

0.1

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.4 -- TYPICAL JUNCTION CAPACITANCE

175

150

125

HER601-HER605

100

75

　　　　 TJ=25

50

25

HER606-HER608

0

0.1 0.5 1 2

4 10 20 4 0 100 200

1000

REVERSE VOLTAGE,VOLTS

FIG.3 -- FORWARD DERATING CURVE

z

6.0

5.0

4.0

3.0

Single Phase

2.0

Half Wave 60HZ

Resistive or

Inductive Load

1.0

0.375"(9.5mm)Lead Length

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE,

FIG.5 -- PEAK FORWARD SURGE CURRENT

350

300

250

200

150

100

50

0

1

TJ=25℃

8.3ms Single Half

Sine-Wave

5

10

50 100

NUMBER OF CYCLES AT 60Hz

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