02N60S5(2004) データシートの表示（PDF） - Infineon Technologies

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02N60S5
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

SPU02N60S5

SPD02N60S5

VDS

RDS(on)

ID

P-TO252.

600 V

3

Ω

1.8 A

P-TO251.

2

3

1

3

2

1

Type

SPU02N60S5

SPD02N60S5

Package

P-TO251.

P-TO252.

Ordering Code

Q67040-S4226

Q67040-S4213

Marking

02N60S5

02N60S5

Maximum Ratings

Parameter

Symbol

Continuous drain current

ID

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

ID puls

Avalanche energy, single pulse

EAS

ID = 1.35 A, VDD = 50 V

Avalanche energy, repetitive tAR limited by Tjmax1) EAR

ID = 1.8 A, VDD = 50 V

Avalanche current, repetitive tAR limited by Tjmax IAR

Gate source voltage

VGS

Gate source voltage AC (f >1Hz)

VGS

Power dissipation, TC = 25°C

Ptot

Operating and storage temperature

Tj , Tstg

Value

1.8

1.1

3.2

50

0.07

1.8

±20

±30

25

-55... +150

Unit

A

mJ

A

V

W

°C

Rev. 2.1

Page 1

2004-03-30

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