BAS70W データシートの表示（PDF） - Diode Semiconductor Korea

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BAS70W

Surface Mount Schottky Barrier Diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Surface Mount Schottky Barrier Diode BAS70W/-04/-05/-06

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Symbol

V(BR)R

IR

VF

CD

Test conditions

IR= 10μA

VR=50V

IF=1.0mA

IF=15mA

VR=0V f=1MHz

MIN MAX UNIT

70

V

100

nA

410

mV

1000

2

pF

Reverse recovery time

trr

IF=IR=10mA RL=100Ω

5

nS

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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