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BAV19WS データシートの表示(PDF) - Electronics Industry

部品番号
コンポーネント説明
メーカー
BAV19WS
EIC
Electronics Industry EIC
BAV19WS Datasheet PDF : 2 Pages
1 2
BAV19WS ~ BAV21WS
PRV : 100 Volts
Io : 250 mA
SMALL SIGNAL DIODES
SOD-323
0.012 (0.3)
FEATURES :
* Silicon Epitaxial Planar Diode
* For General Purpose
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SOD-323 plastic Case
0.059 (1.5)
0.043 (1.1)
min. 0.010 (0.25)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Parameter
Reverse Voltage
Peak Reverse Voltage
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
Surge Forward Current at t < 1 s and Tj = 25 °C
Power Dissipation at Tamb = 25 °C
Junction Temperature
Storage Temperature Range
Symbol
VR
VRM
BAV19WS
100
120
BAV20WS
150
200
BAV21WS
200
250
IF(AV)
250
IFSM
Ptot
1.0
200 1)
Tj
150
TS
-65 to + 175
Unit
V
V
mA
A
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Rating at Tj = 25 °C unless otherwise specified)
Parameter
Symbol Test Condition
Forward Voltage
VF
Leakage Current
BAV19WS
BAV20WS
IR
BAV21WS
Capacitance
Ctot
Reverse Recovery Time
Trr
Note : 1) Valid provided that electrodes are kept at ambient temperature
IF = 100 mA
IF = 200 mA
VR = 100 V
VR = 150 V
VR = 200 V
VF = VR = 0 V
IF = 30 mA, IR = 30mA
Irr = 3 mA, RL = 100
Page 1 of 2
Min. Typ. Max. Unit
-
-
1
V
-
- 1.25 V
-
- 100
-
- 100 nA
-
- 100
-
-
1.5 pF
-
-
50 ns
Rev. 03 : March 25, 2005

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