BAS19 データシートの表示（PDF） - Infineon Technologies

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BAS19

Silicon Switching Diodes

Infineon Technologies 

BAS19...BAS21

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

I(BR) = 100 µA, BAS19

I(BR) = 100 µA, BAS20

I(BR) = 100 µA, BAS21

V(BR)

120 -

200 -

250 -

V

-

-

-

Reverse current

VR = VRmax

VR = VRmax, TA = 150 °C

IR

µA

-

-

0.1

-

- 100

Forward voltage

IF = 100 mA

IF = 200 mA

VF

V

-

-

1

-

- 1.25

AC Characteristics

Diode capacitance-

CT

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

IF = 30 mA, IR = 30 mA, measured at IR = 3 mA,

RL = 100

-

-

5 pF

-

-

50 ns

Test circuit for reverse recovery time

D.U.T.

ΙF

Oscillograph

Pulse generator: tp = 1 s, D = 0.05,

tr = 0.6 ns, Ri = 50 

Oscillograph: R = 50 , tr = 0.35 ns, C
1 pF

EHN00018

2

Aug-06-2001

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