BC857C データシートの表示（PDF） - PANJIT INTERNATIONAL
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BC857C Datasheet PDF : 4 Pages
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BC856 SERIES
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Thermal Resistance , Junction to Ambient
RΘJA
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. Minimum pad layout.
Value
556
UNIT
OC /W
EL ECTRICAL CHARACTERISTICS (TJ=25 C, unless otherwise noted)
PARAMETER
Collector - Emitter Breakdown Voltage
(IC=-10mA, IB=0)
SYMBOL
BC856A,B
BC857A,B,C V(BR)CEO
BC858A,B,C, BC859B,C
MIN.
-65
-45
-30
Collector - Base Breakdown Voltage
(IC=-10µA, IE=0)
BC856A,B
-80
BC857A,B,C V(BR)CBO
-50
BC858A,B,C, BC859B,C
-30
Emitter - Base Breakdown Voltage (IE=-1µA, IC=0)
V(BR)EBO
-5.0
Emitter-Base Cutoff Current (VEB=-5V)
IEBO
-
Collector-Base Cutoff Current (VCB=-30V, IE=0)
T J=150 OC
-
ICBO
-
DC Current Gain
BC856A, BC857A, BC858A
-
(IC=-10µA, VCE=-5V)
BC856B, BC857B, BC858B, BC859B
-
BC857C, BC858C, BC859C
-
hFE
(IC=-2.0mA, VCE=-5V)
BC856A, BC857A, BC858A
110
BC856B, BC857B, BC858B, BC859B
200
BC857C, BC858C, BC859C
420
Collector – Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
Base – Emitter Saturation Voltage
(IC=-10mA, IB=-0.5mA)
(IC=-100mA, IB=-5.0mA)
Base – Emitter On Voltage
(IC=-2.0mA, VCE=-5.0V)
(IC=-10mA, VCE=-5.0V)
Collector - Base Capacitance
(VCB=-10V, IE=0, f=1MHz)
VCE(SAT)
VBE(SAT)
VBE(ON)
CCB
-
-
-
-
-0.60
-
-
Current-Gain - Bandwidth Product
(IC=-10mA, VCE=-5.0V, f=100MHz)
FT
-
TYP.
-
-
-
-
-
-
-
-
-
-
90
150
270
180
290
520
-
-
-0.7
-0.9
-
-
-
200
MAX.
-
-
-
-
-
-
-
-100
-15
-4.0
-
-
-
220
450
800
-0.3
-0.65
-
-
-0.75
-0.82
4.5
-
UNIT
V
V
V
nA
nA
uA
-
V
V
V
pF
MHz
REV.0.1-FEB.9.2009
PAGE . 2
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