BC859 データシートの表示（PDF） - NXP Semiconductors.
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BC859 Datasheet PDF : 8 Pages
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NXP Semiconductors
PNP general purpose transistors
Product data sheet
BC859; BC860
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BC859B; BC860B
BC859C; BC860C
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
BC859B; BC860B;
BC859C; BC860C
noise figure
BC859B; BC860B;
BC859C; BC860C
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −5 V
IC = −2 mA; VCE = −5 V;
see Figs 2 and 3
−
−1 −15 nA
−
−
−4 μA
−
−
−100 nA
220 −
475
420 −
800
IC = −10 mA; IB = −0.5 mA
−
IC = −100 mA; IB = −5 mA
−
IC = −10 mA; IB = −0.5 mA; note 1
−
IC = −100 mA; IB = −5 mA; note 1
−
IC = −2 mA; VCE = −5 V; note 2
−600
IC = −10 mA; VCE = −5 V; note 2
−
IE = Ie = 0; VCB = −10 V; f = 1 MHz −
IC = Ic = 0; VEB = −500 mV; f = 1 MHz −
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 30 Hz to 15 kHz
−
−75
−250
−700
−850
−650
−
4.5
10
−
−
−300
−650
−
−
−750
−820
−
−
−
4
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
IC = −200 μA; VCE = −5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
4
dB
Notes
1. VBEsat decreases by about −1.7 mV/K with increasing temperature.
2. VBE decreases by about −2 mV/K with increasing temperature.
2004 Jan 16
4
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