BC859 データシートの表示（PDF） - Infineon Technologies

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BC859

PNP Silicon AF Transistors

Infineon Technologies 

BC856...BC860

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

DC collector current

Peak collector current

Peak base current

Peak emitter current

Total power dissipation, TS = 71 °C

Junction temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCBO

VCES

VEBO

IC

ICM

IBM

IEM

Ptot

Tj

Tstg

BC856 BC857 BC858 Unit

BC860 BC859

65

45

30 V

80

50

30

80

50

30

5

5

5

100

mA

200

mA

200

200

330

mW

150

°C

-65 ... 150

RthJS

240

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO

IC = 10 mA, IB = 0

BC856

65

-

BC857/860

45

-

BC858/859

30

-

V

-

-

-

Collector-base breakdown voltage

V(BR)CBO

IC = 10 µA, IE = 0

BC856

80

-

-

BC857/860

50

-

-

BC858/859

30

-

-

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

Dec-11-2001

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