LND-TRM34 データシートの表示（PDF） - Linear Dimensions Semiconductor

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LND-TRM34

LOW POWER 300 TO 500 MHz FSK TRANSMITTER

Linear Dimensions Semiconductor 

LND TRM34

LOW POWER 300 TO 500 MHz FSK TRANSMITTER

Theory of

operation

Electrical

characteristics

The LND TRM34 comprises three main elements: the RF output frequency is 64 times the crystal

1 Input buffer and modulator

2 Frequency synthesizer for generation of the RF

output carrier from a low frequency external

crystal

3 Power amplifier for driving an external antenna

The IC accepts a digital CMOS input, and

modulates a fixed amplitude RF carrier in

frequency according to the digital input level.

The RF carrier is generated by the on-chip

phase locked loop (PLL) frequency synthesizer.

This contains a fixed divider which ensures that

reference frequency. The power amplifier

provides a variable output level of up to 2 dBm

of output power depending upon the value of an

external resistor RI.

The PA has balanced outputs OUT1 and OUT2

which are in open collector configuration.

A balanced output is used since it provides

a high degree of suppression of even-order

harmonics of the fundamental. Odd order

harmonic suppression is achieved using on-

chip cancellation techniques.

Table 1: Absolute maximum ratings

Parameter

Conditions

Supply voltage

Input voltage - Logic Inputs DATA & SBY pins

Input Current - Logic Inputs DATA & SBY pins

Storage temperature

Junction temperature

Symbol

VCC

Min

Max

Unit

-0.3

+7.0

V

-0.3 V VCC + 0.3V

-1.0

+1.0

mA

-40

150

°C

-40

150

°C

Table 2: Operating conditions

@ 434 MHz; @ 318 MHz

Parameter

Symbol

Min

Max

Unit

Supply voltage

VCC

2.6

4.8

V

Ambient temperature

Ta

-40

65

°C

Note:

All specification parameters guaranteed only with the following components

(please refer to figure 2 for application circuit):

RF transformer

Crystal

Mini-Circuits TC4-14

Euroquartz B537 6.78-MHz crystal (Cicad = 10 pF)

R1 = 3.9 k R2 = 3.3 k C7 = 1 nF C8 = 47 pF C1 = C2 = 22 pF

Table 3: DC Characteristics at 3.0V VCC and 23ºC ambient temperature

all parameters 100% production tested under these conditions unless otherwise stated

Parameter

Conditions

Symbol

Min

Typ

Standby Current

SBY = low

Iccstb

0.1

Supply Current

including open-collector output

currents

Icclow

DATA logic high level guaranteed by design

Vhigh 0.7*VCC

DATA logic low level guaranteed by design

Vlow

-0.3V

DATA input current

guaranteed by design

-0.3 < Vin < VCC+0.3

Idata

-10

Bias voltage on pin PS guaranteed by design

V(PS)

0.4

I(PS) = 100 µA

Max

Unit

1

µA

25

mA

VCC+0.3

0.3*VCC

+10

µA

V

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