Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
V(BR)CBO
75
V(BR)CEO
40
V(BR)EBO
6.0
Collector Cutoff Current
ICBO
⎯
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
ICEX
⎯
IEBO
⎯
IBL
⎯
35
50
75
hFE
100
40
35
50
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
VCE(SAT)
⎯
⎯
0.6
VBE(SAT)
⎯
Cobo
⎯
Cibo
⎯
fT
300
Noise Figure
NF
⎯
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
td
⎯
tr
⎯
ts
⎯
tf
⎯
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
10
10
10
20
⎯
⎯
⎯
300
⎯
⎯
⎯
0.3
1.0
1.2
2.0
8
25
⎯
4.0
10
25
225
60
Unit
Test Conditions
V IC = 10μA, IE = 0
V IC = 10mA, IB = 0
V IE = 10μA, IC = 0
nA VCB = 60V, IE = 0
μA VCB = 60V, IE = 0, TA = 150°C
nA VCE = 60V, VEB(OFF) = 3.0V
nA VEB = 3.0V, IC = 0
nA VCE = 60V, VEB(OFF) = 3.0V
IC = 100μA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
⎯ IC = 150mA, VCE = 10V
IC = 500mA, VCE = 10V
IC = 10mA, VCE = 10V, TA = -55°C
IC = 150mA, VCE = 1.0V
V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
pF
pF
MHz
dB
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
VCE = 20V, IC = 20mA, f = 100MHz
VCE = 10V, IC = 150μA,
RS = 1.0kΩ, f = 1.0kHz
ns VCC = 30V, IC = 150mA,
ns VEB(off) = 0.5V, IB1 = 15mA
ns VCC = 30V, IC = 150mA,
ns IB1 = IB2 = 15mA
RθJA = 125°C/W
DS31156 Rev. 3 - 2
VCE, COLLECTOR EMITTER VOLTAGE (V)
2 of 4
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