MMBT6589T1 データシートの表示（PDF） - ON Semiconductor
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MMBT6589T1 Datasheet PDF : 5 Pages
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MMBT6589T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −30 Vdc, IE = 0)
Collector−Emitter Cutoff Current
(VCES = −30 Vdc)
Emitter Cutoff Current
(VEB = −4.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4) (Figure 1)
(IC = −1.0 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = 2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4) (Figure 3)
(IC = −0.5 A, IB = −0.05 A)
(IC = −1.0 A, IB = 0.1 A)
(IC = −2.0 A, IB = −0.2 A)
Base −Emitter Saturation Voltage (Note 4) (Figure 2)
(IC = −1.0 A, IB = −0.1 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Output Capacitance (VCB = −5.0 V, f = 1.0 MHz)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
ICES
IEBO
−30
−50
−5.0
−
−
−
−
−
−
−0.1
−0.1
−0.1
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
hFE
100
−
100
300
80
−
40
−
VCE(sat)
V
−
−0.25
−
−0.30
−
−0.65
VBE(sat)
V
−
−1.2
VBE(on)
V
−
−1.1
fT
MHz
100
−
Cobo
−
20
pF
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