BD243C データシートの表示（PDF） - Power Innovations

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BD243C

NPN SILICON POWER TRANSISTORS

Power Innovations 

BD243, BD243A, BD243B, BD243C

NPN SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS633AH

VCE = 4 V

TC = 25°C

tp = 300 µs, duty cycle < 2%

100

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS633AE

10

IC = 300 mA

IC = 1 A

IC = 3 A

IC = 6 A

1·0

10

0·1

1·0

0·1

1·0

IC - Collector Current - A

Figure 1.

0·01

10

0·001

0·01

0·1

1·0

10

IB - Base Current - A

Figure 2.

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

TCS633AF

1·2

VCE = 4 V

TC = 25°C

1·1

1·0

0·9

0·8

0·7

0·6

0·1

1·0

10

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

3

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