BD243B データシートの表示（PDF） - Motorola => Freescale
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BD243B Datasheet PDF : 6 Pages
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BD243B BD243C BD244B BD244C
500
300
200 TJ = 150°C
VCE = 2.0 V
100
70
25°C
50
30
20
– 55°C
10
7.0
5.0
0.06 0.1
0.2 0.3 0.4 0.6 1.0
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 8. DC Current Gain
4.0 6.0
2.0
TJ = 25°C
1.6
IC = 1.0 A
2.5 A
5.0 A
1.2
0.8
0.4
0
10
20 30 50
100 200 300 500
1000
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
2.0
TJ = 25°C
1.6
VBE(sat) @ IC/IB = 10
1.2
0.8
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.06 0.1
0.2 0.3 0.4 0.6 1.0
2.0 3.0 4.0 6.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. “On” Voltages
+ 2.5
+ 2.0 *APPLIES FOR IC/IB ≤ 5.0
+ 1.5
+ 1.0
+ 0.5 *θVC FOR VCE(sat)
0
– 0.5
+ 25°C to + 150°C
– 55°C to + 25°C
– 1.0
+ 25°C to + 150°C
– 1.5 θVB FOR VBE
– 2.0
– 55°C to + 25°C
– 2.5
0.06 0.1 0.2 0.3 0.5
1.0
2.0 3.0 0.4 0.6
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
103
VCE = 30 V
102
TJ = 150°C
101
100°C
100
25°C
10–1 IC = ICES
10– 2 REVERSE
FORWARD
10– 3
– 0.3 – 0.2 – 0.1 0 + 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6 + 0.7
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
10M
VCE = 30 V
1.0M
IC = 10 x ICES
100k
IC = 2 x ICES
10k
IC ≈ ICES
1.0k
0.1k
20
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
40
60
80 100
120 140 160
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Effects of Base–Emitter Resistance
4
Motorola Bipolar Power Transistor Device Data
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