BTS129 データシートの表示（PDF） - Infineon Technologies

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BTS129

N-Channel TEMPFET®

Infineon Technologies 

TEMPFET® BTS 129

Electrical Characteristics

at Tj = 25 °C, unless otherwise specified.

Parameter

Symbol

min.

Static Characteristics

Drain-source breakdown voltage

VGS = 0, ID = 0.25 mA

Gate threshold voltage

VGS = VDS, ID = 1 mA

Zero gate voltage drain current

VGS = 0 V, VDS = 60 V

Tj = 25 °C

Tj = 150 °C

Gate-source leakage current

VGS = 20 V, VDS = 0

Tj = 25 °C

Tj = 150 °C

Drain-source on-state resistance

VGS = 10 V, ID =17 A

V(BR)DSS

60

VGS(th)

2.5

I DSS

–

–

I GSS

–

–

RDS(on)

–

Dynamic Characteristics

Forward transconductance

VDS ≥ 2 × ID × R , DS(on)max ID = 17 A

gfs

8.0

Input capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Ciss

700

Output capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Coss

–

Reverse transfer capacitance

VGS = 0, VDS = 25 V, f = 1 MHz

Crss

–

Turn-on time ton, (ton = td(on) + tr)

td(on)

–

VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω tr

–

Turn-off time toff, (toff = td(off) + tf)

td(off)

–

VCC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω tf

–

Values

Unit

typ.

max.

V

–

–

3.0

3.5

µA

1

10

100

300

10

100

nA

2

4

µA

Ω

0.04

0.05

S

13.0

18.0

pF

940

1250

500

750

180

270

25

40

ns

60

90

100

130

75

95

2

19.02.04

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