2N6668(2002) データシートの表示（PDF） - ON Semiconductor
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2N6668 Datasheet PDF : 8 Pages
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ON Semiconductor)
Darlington Silicon
Power Transistors
. . . designed for general–purpose amplifier and low speed
switching applications.
• High DC Current Gain —
hFE = 3500 (Typ) @ IC = 4 Adc
• Collector–Emitter Sustaining Voltage — @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) — 2N6667
= 80 Vdc (Min) — 2N6668
• Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc
• Monolithic Construction with Built–In Base–Emitter Shunt Resistors
• TO–220AB Compact Package
• Complementary to 2N6387, 2N6388
COLLECTOR
BASE
[ 8 k [ 120
2N6667
2N6668
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
60–80 VOLTS
65 WATTS
4
1
2
3
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–09
TO–220AB
EMITTER
Figure 1. Darlington Schematic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current — Continuous
— Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TA = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Indicates JEDEC Registered Data.
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
2N6667
2N6668
60
80
60
80
5
10
15
250
65
0.52
2
0.016
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
mAdc
watts
W/_C
Watts
W/_C
_C
© Semiconductor Components Industries, LLC, 2002
1
April, 2002 – Rev. 4
Publication Order Number:
2N6667/D
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