2N6667(2002) データシートの表示（PDF） - ON Semiconductor

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2N6667
(Rev.:2002)

Darlington Silicon Power Transistors

ON Semiconductor 

2N6667 2N6668

10,000

5000

2000

1000

500

TC = 25°C

200

VCE = 4 VOLTS

100

IC = 3 AMPS

50

20

10

1 2 3 5 7 10 20 30 50 70 100 200 300 500 1000

f, FREQUENCY (kHz)

Figure 7. Typical Small–Signal Current Gain

300

TJ = 25°C

200

Cib

Cob

100

70

50

30

0.1 0.2

0.5 1 2

5 10 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Typical Capacitance

50 100

20,000

10,000

7000

5000

TJ = 150°C

VCE = 3 V

3000

2000

1000

700

500

300

200

0.1

TJ = 25°C

TJ = - 55°C

0.2 0.3 0.5 0.7 1

23 5

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Typical DC Current Gain

7 10

2.6

2.2

IC = 2 A

4A

1.8

TJ = 25°C

6A

1.4

1

0.6

0.3

0.5 0.7 1

23

5 7 10

20 30

IB, BASE CURRENT (mA)

Figure 10. Typical Collector Saturation Region

3

2.5

TJ = 25°C

2

1.5

VBE(sat) @ IC/IB = 250

1

0.5

0.1

VBE @ VCE = 3 V

VCE(sat) @ IC/IB = 250

0.2 0.3 0.5 0.7 1

23

IC, COLLECTOR CURRENT (AMPS)

5 7 10

Figure 11. Typical “On” Voltages

+ā5

+ā4

+ā3

*IC/IB ≤

hFEĂ@ĂVCEĂ +Ă 3.0ĂV

3

+ā2

25°C to 150°C

+ā1

-ā55°C to 25°C

0

-ā1

∗θVC for VCE(sat)

-ā2

-ā3 θVB for VBE

25°C to 150°C

-ā4

-ā55°C to 25°C

-ā5

0.1

0.2 0.3 0.5 0.7 1

2 3 5 7 10

IC, COLLECTOR CURRENT (AMP)

Figure 12. Typical Temperature Coefficients

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