2N2907A データシートの表示（PDF） - ON Semiconductor
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2N2907A Datasheet PDF : 3 Pages
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2N2907A
Switching Transistor
PNP Silicon Epitaxial
Features
• MIL−PRF−19500/291 Qualified
• Available as JAN, JANTX, and JANTXV
• Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PT
Value
−60
−60
−5.0
−600
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PT
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
325
°C/W
Thermal Resistance, Junction−to−Case
RqJC
150
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2907A
JANTX2N2907A TO−18
Bulk
JANTXV2N2907A
© Semiconductor Components Industries, LLC, 2011
1
July, 2011 − Rev. 0
Publication Order Number:
2N2907A/D
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