2N3019 データシートの表示（PDF） - Inchange Semiconductor
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2N3019 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2N3019
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-Emitter Breakdown Voltage IC=30mA ; IB=0
VCBO
Collector-Base Breakdown Voltage
IC=0.1mA ; IE=0
VEBO
Emitter-Base Breakdown Voltage
IC=0.1mA ; IE=0
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC=150mA; IB= 15mA
IC= 0.5A; IB= 50mA
IC= 150mA ; IB=15mA
VCE= 90V; IB=0
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC=0
hFE-1
DC Current Gain
IC= 0.1mA ; VCE= 10V
hFE-2
DC Current Gain
IC= 10mA ; VCE= 10V
hFE-3
DC Current Gain
IC= 150mA ; VCE= 10V
hFE-3
DC Current Gain
IC= 0.5A ; VCE= 10V
hFE-4
DC Current Gain
IC= 1A ; VCE= 10V
fT
Current Gain-Bandwidth Product
IC= 50mA ; VCE= 10V;f=20MHz
MIN MAX UNIT
80
V
140
V
7
V
0.2
V
0.5
V
1.1
V
1.5
uA
0.1
uA
50
90
100 300
50
15
100 400 MHz
isc website：www.iscsemi.cn
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