Q67060-S6505-A5 データシートの表示（PDF） - Infineon Technologies

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Q67060-S6505-A5

Smart Lowside Power Switch

Infineon Technologies 

Electrical Characteristics

Parameter

at Tj = 25°C, unless otherwise specified

Dynamic Characteristics

Turn-on time VIN to 90% ID:

RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

Turn-off time VIN to 10% ID:

RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

Slew rate on

70 to 50% Vbb:

RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

Slew rate off

50 to 70% Vbb:

RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

Protection Functions1)

Thermal overload trip temperature

Thermal hysteresis 2)

Input current protection mode

Tj = 150 °C

Unclamped single pulse inductive energy 2)

ID = 2.2 A, Tj = 25 °C, Vbb = 12 V

Inverse Diode

Inverse diode forward voltage

IF = 10.9 A, tm = 250 µs, VIN = 0 V,

tP = 300 µs

BTS 118 D

Symbol

Values

Unit

min. typ. max.

ton

-

toff

-

-dVDS/dton -

dVDS/dtoff

-

40 100 µs

70 100

0.4 1.5 V/µs

0.6 1.5

Tjt

DTjt

IIN(Prot)

150 175 - °C

-

10

-K

- 100 300 µA

EAS

2

-

-J

VSD

-

1.0 1.5 V

1Integrated protection functions are designed to prevent IC destruction under fault conditions

described in the data sheet. Fault conditions are considered as "outside" normal operating range.

Protection functions are not designed for continuous repetitive operation.

2not subject to production test, specified by design

Page 4

2004-03-05

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