MBR2535CT データシートの表示（PDF） - Vishay Semiconductors
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MBR2535CT Datasheet PDF : 5 Pages
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MBR(F,B)2535CT thru MBR(F,B)2560CT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30
Resistive or Inductive Load
24
18
12
6
0
0
50
100
150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
150
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
125
100
75
50
25
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
100
TJ = 150 °C
10
1.0
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
0.1
0.01
0
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
MBR2535CT - MBR2545CT
MBR2550CT & MBR2560CT
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Document Number: 88675 For technical questions within your region, please contact one of the following:
Revision: 15-Jun-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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