S9014L データシートの表示（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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S9014L

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

Complimentary to S9015

MARKING: J6

MAXIMUM RATINGS (TA=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

50

VCEO

45

VEBO

5

IC

0.1

PC

0.2

TJ

150

Tstg

-55 to +150

Unit

V

V

V

A

W

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol Test conditions

Collector-base breakdown voltage

VCBO IC= 100μA, IE=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

VCEO

VEBO

IC= 0.1mA, IB=0

IE=100μA, IC=0

Collector cut-off current

ICBO

VCB=50 V , IE=0

Collector cut-off current

ICEO

VCE=35V , IB=0

Emitter cut-off current

IEBO

VEB= 3V , IC=0

DC current gain

hFE

VCE=5V, IC= 1mA

Collector-emitter saturation voltage

VCE(sat) IC=100 mA, IB= 5mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=100 mA, IB= 5mA

fT

VCE=5V, IC= 10mA

f=30MHz

CLASSIFICATION OF hFE

Rank

Range

L

200-450

S9014 (NPN)

1. BASE

2. EMITTER

3. COLLECTO

SOT-23

Min Typ Max Unit

50

V

45

V

5

V

0.1

uA

0.1

uA

0.1

uA

200

1000

0.3

V

1

V

150

MHz

H

450-1000

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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