MPS2907A(2001) データシートの表示（PDF） - ON Semiconductor
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MPS2907A Datasheet PDF : 8 Pages
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MPS2907A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = –10 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
Collector Cutoff Current
(VCB = –50 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0, TA = 150°C)
Base Current
(VCE = –30 Vdc, VEB(off) = –0.5 Vdc)
ON CHARACTERISTICS
DC Current Gain
(IC = –0.1 mAdc, VCE = –10 Vdc)
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –150 mAdc, VCE = –10 Vdc) (Note 1.)
(IC = –500 mAdc, VCE = –10 Vdc) (Note 1.)
Collector–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
Base–Emitter Saturation Voltage (Note 1.)
(IC = –150 mAdc, IB = –15 mAdc)
(IC = –500 mAdc, IB = –50 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (Notes 1. and 2.),
(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On Time
Delay Time
(VCC = –30 Vdc, IC = –150 mAdc,
IB1 = –15 mAdc) (Figures 1 and 5)
Rise Time
Turn–Off Time
Storage Time
(VCC = –6.0 Vdc, IC = –150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
Fall Time
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min
Max
Unit
V(BR)CEO
–60
V(BR)CBO –60
V(BR)EBO –5.0
ICEX
–
ICBO
–
–
IB
–
–
–
–
–50
–0.01
–10
–50
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
hFE
–
75
–
100
–
100
–
100
300
50
–
VCE(sat)
–
–
Vdc
–0.4
–1.6
VBE(sat)
–
–
Vdc
–1.3
–2.6
fT
200
–
MHz
Cobo
–
8.0
pF
Cibo
–
30
pF
ton
–
45
ns
td
–
10
ns
tr
–
40
ns
toff
–
100
ns
ts
–
80
ns
tf
–
30
ns
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