S9018 データシートの表示（PDF） - SUNMATE electronic Co., LTD

部品番号

コンポーネント説明

メーカー

S9018

SILICON EPITAXIAL PLANAR TRANSISTOR

SUNMATE electronic Co., LTD 

Electrical Characteristics TA = 25°C unless otherwise specified

Parameter

Symbol

Collector-base breakdown voltage V(BR)CBO

Collector-emitter breakdown voltage V(BR)CEO

Emitter-base breakdown voltage

V(BR)EBO

Collector cut-off current

ICBO

Collector cut-off current

ICEO

Emitter cut-off current

IEBO

DC current gain

hFE

Collector-emitter saturation voltage

Base-emitter saturation voltage

VCE(sat)

VBE(sat)

Transition frequency

fT

Test conditions MIN

IC=100μA,IE=0

25

IC=0.1mA,IB=0

18

IE=-100μA,IC=0

4

VCB=20V,IE=0

VCE=15V,IB=0

VEB=3V,IC=0

VCE=5V,IC=1mA

70

IC=10 mA, IB= 1mA

IC=10 mA, IB= 1mA

VCE=5V, IC= 5mA

f=400MHz

600

TYP

MAX UNIT

V

V

V

0.1 μA

0.1 μA

0.1 μA

190

0.5 V

1.4 V

MHz

2 of 3

Share Link: