MMDT2222A データシートの表示（PDF） - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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MMDT2222A Datasheet PDF : 2 Pages
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Plastic-Encapsulate Transistors
FEATURES
Complementary PNP Type available MMDT2907A
MARKING: K1P
MAXIMUM RATINGS (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
75
VCEO
40
VEBO
6
IC
600
IC
200
TJ
150
Tstg
-55 to +150
Unit
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
VCBO
VCEO
VBO
ICBO
ICEX
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
hFE(6)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
Test conditions
IC= 10μA, IE=0
IC= 10mA, IB=0
IE=10μA.IC=0
VCB= 60V, IE=0
VCE= 60V,VEB(Off)=3V
VEB= 3 V, IC=0
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
VCE=1V, IC= 150mA
IC=150mA, IB= 15mA
IC=500mA, IB= 50mA
IC=150mA, IB=15mA
IC=500mA, IB= 50mA
Transition frequency
fT
VCE=20V, IC= 20mA,
Output Capacitance
Input Capacitance
Noise Figure
f=100MHz
Cob
VCB=10V, IE=0,f=1MHz
Cib
VEB=0.5V,IC= 0,f=1MHz
VCE=10V, IC=100μA,
NF
f=1KHz,Rs=1KΩ
MMDT2222A (NPN)
C2
B1
E1
E2
B2
C1
SOT-363
Min
Max
Unit
75
V
40
V
6
V
10
nA
10
nA
10
nA
35
50
75
100
300
40
35
0.3
V
1
V
0.6
1.2
V
2
V
300
MHz
8
pF
25
pF
4
dB
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1
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