PXT2222A データシートの表示（PDF） - Philips Electronics
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PXT2222A Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN switching transistor
Product specification
PXT2222A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
Rth j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
100
K/W
20
K/W
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
IEBO
hFE
VCEsat
VBEsat
Cc
Ce
fT
F
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
IE = 0; VCB = 60 V
−
IE = 0; VCB = 60 V; Tamb = 125 °C
−
IC = 0; VBE = 5 V
−
IC = 0.1 mA; VCE = 10V
35
IC = 1 mA; VCE = 10 V
50
IC = 10 mA; VCE = 10 V
75
IC = 10 mA; VC = 10 V; Tamb = −55 °C 35
IC = 150 mA; VCE = 1 V
50
IC = 150 mA; VCE = 10 V
100
IC = 500 mA; VCE = 10 V
40
IC = 150 mA; IB = 15 mA
−
IC = 500 mA; IB = 50 mA
−
IC = 150 mA; IB = 15 mA
0.6
IC = 500 mA; IB = 50 mA
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
IC = 20 mA; VCE = 10 V; f = 100 MHz 300
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
−
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = 150 mA; IBon = 15 mA;
−
IBoff = −15 mA
−
−
−
−
−
MAX.
10
10
10
−
−
−
−
−
300
−
300
1
1.2
2
8
25
−
4
UNIT
nA
µA
nA
mV
V
V
V
pF
pF
MHz
dB
35
ns
15
ns
20
ns
250
ns
200
ns
60
ns
1999 Apr 14
3
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