PXT2222A データシートの表示（PDF） - Willas Electronic Corp.

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PXT2222A

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

SOT-89 Plastic-Encapsulate Transistors

PXT2222A

TRANSISTOR (NPN)

FEATURES

z Epitaxial planar die construction

z

SOT-89

1. BASE

2. COLLECTOR

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

75

40

6

600

0.5

150

-55 ~150

Unit

V

V

V

mA

W

℃

℃

3. EMITTER

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Collector-base breakdown voltage

V(BR)CBO IC= 10μ A,IE=0

75

Collector-emitter breakdown voltage

V(BR)CEO IC= 10mA, IB=0

40

Emitter-base breakdown voltage

V(BR)EBO IE=10μA, IC=0

6

Collector cut-off current

ICBO

VCB=60V, IE=0

Emitter cut-off current

IEBO

VEB= 5V , IC=0

hFE(1)

VCE=10V, IC= 0.1mA

35

hFE(2)

VCE=10V, IC= 1mA

50

DC current gain

hFE(3)

VCE=10V, IC= 10mA

75

hFE(4)

VCE=10V, IC= 150mA

100

hFE(5)

VCE=1V, IC= 150mA

50

hFE(6)

VCE=10V, IC= 500mA

40

Collector-emitter saturation voltage

VCE(sat)

VCE(sat)

IC=500mA, IB= 50mA

IC=150mA, IB=15mA

Base-emitter saturation voltage

Transition frequency

VBE(sat) IC=500mA, IB=50mA

VBE(sat) IC=150mA, IB=15mA

0.6

fT

VCE=10V, IC=20mA

f=100MHz

300

Output Capacitance

Cob

VCB=10V, IE= 0,f=1MHz

Delay time

Rise time

td

VCC=30V, IC=150mA

tr

VBE(off)=0.5V,IB1=15mA

Storage time

Fall time

tS

VCC=30V, IC=150mA

tf

IB1=- IB2= 15mA

Max

Unit

V

V

V

0. 01

μA

0. 01

μA

300

1

V

0.3

V

2.0

V

1.2

V

MHz

8

pF

10

ns

25

ns

225

ns

60

ns

2012-0

WILLAS ELECTRONIC CORP.

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