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MITSUBISHI Nch POWER MOSFET
FS20UMA-4A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±10µA, VDS = 0V
VGS = ±20V, VDS = 0V
VDS = 200V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 100V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
PERFORMANCE CURVES
Limits
Unit
Min.
Typ. Max.
200
—
—
V
±20
V
—
—
±10
µA
—
—
1
mA
2.0
3.0
4.0
V
—
0.14
0.18
Ω
—
1.40
1.80
V
—
18.0
—
S
—
1650
—
pF
—
200
—
pF
—
65
—
pF
—
20
—
ns
—
40
—
ns
—
290
—
ns
—
70
—
ns
—
0.95
—
V
—
—
1.56 °C/W
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
102
7
5
3
2
tw = 10µs
101
7
100µs
5
3
2
1ms
100
7
5
3
2 TC = 25°C
Single Pulse
10–1
2 3 5 7 101 2 3
10ms
DC
5 7 102 2 3 5 7 103 2
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
TC = 25°C
Pulse Test
40
VGS = 20V
5V
10V
8V
30
6V
20
4V
10
PD = 80W
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
16
4V
VGS = 20V
12
10V
PD = 80W
6V
8
3.5V
4
TC = 25°C
Pulse Test
0
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998