ACE1632BYM データシートの表示（PDF） - ACE Technology Co., LTD.
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ACE1632BYM Datasheet PDF : 6 Pages
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ACE1632B
N-Channel Enhancement Mode Field Effect Transistor
Description
ACE1613B uses advanced trench technology to provide excellent RDS(ON). This device particularly suits
for low voltage application such as power management of desktop computer or notebook computer power
management, DC/DC converter.
This device has specifically been designed to minimize input capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and
Computer application. It is also intended for any application with low gate charge drive requirements.
Features
VDS =60V, ID=18A, VGS 20V
RDS(ON)<40mΩ @VGS=10V
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
60 V
Gate-Source Voltage
VGSS ±20 V
Continuous
Maximum Drain Current
Pulsed
ID
18
A
45
Continuous Power Dissipation (large heatsick) PD 110 W
Operating Temperature / Storage Temperature TJ/TSTG -55/150 OC
Packaging Type
TO-252
D
G
S
VER 1.2 1
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