ACE8601B データシートの表示（PDF） - ACE Technology Co., LTD.

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ACE8601B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

ACE Technology Co., LTD. 

ACE8601B

Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection

Description

The ACE8601B uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is

suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain

configuration.

Features

 VDS(V)=20V

 ID=6A (VGS=4.5V)

 RDS(ON)<21 mΩ (VGS=4.5V)

 RDS(ON)<25 mΩ (VGS=2.5V)

 RDS(ON)<35 mΩ (VGS=1.8V)

 ESD Protected: 2000V

Absolute Maximum Ratings

Parameter

Symbol Max Unit

Drain-Source Voltage

VDSS

20 V

Gate-Source Voltage

Continuous Drain Current *AC

TA=25℃

TA=70℃

VGSS

ID

±8 V

6

A

4.8

Pulsed Drain Current

IDM

24 A

Power Dissipation

TA=25℃

TA=70℃

PD

2.5

W

1.6

Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 OC

Packaging Type

DFN3*3-8L

VER 1.2 1

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