ACE8601B データシートの表示（PDF） - ACE Technology Co., LTD.
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ACE8601B
ACE Technology Co., LTD.
ACE8601B Datasheet PDF : 7 Pages
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ACE8601B
Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE8601B XX + H
Halogen - free
Pb - free
NN : DFN3*3-8L
Electrical Characteristics
TA=25℃, unless otherwise noted.
Parameter
Symbol
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
Maximum Body-Diode
Continuous Current
V(BR)DSS
VGS(th)
IGSS
IDSS
IS
Drain-Source On-Resistance RDS(ON)
Forward Transconductance
gfs
Diode Forward Voltage
VSD
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
REVERSE Transfer Capacitance
Ciss
Coss
Crss
Conditions
Static
VGS=0V, ID=250 uA
VDS=VGS, IDS=250uA
VDS=0V,VGS=±8V
VDS=20V, VGS=0V
VGS=4.5V, ID=8A
VGS=2.5V, ID=7A
VGS=1.8V, ID=6A
VDS=5V,ID=6.5A
ISD=2.5A, VGS=0V
Switching
VDS=10V, VGS=4.5V, ID=8A
VGS=5V, RL=1.5Ω, VDS=10V,
RGEN=3Ω
Dynamic
VGS=0V, VDS=10V, f=1MHz
Min. Typ. Max. Unit
20
V
0.4 0.52 1
10 uA
1 uA
2.5 A
16.2 21
19.4 25 mΩ
24.4 33
13
S
0.67 1.6 V
13.8 17.94
4.1 5.33 nC
5.6 7.28
6.2 12.4
12.7 25.4
nS
51.7 103.4
16 32
1160
104
pF
29
VER 1.2 2
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